u20xct-e3, ub20xct-e3 www.vishay.com vishay general semiconductor revision: 30-oct-13 1 document number: 89017 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common cathode ultrafast plastic rectifier features ? power pack ? oxide planar chip junction ? ultrafast recovery time ? soft recovery characteristics ? low switching losses, high efficiency ? high forward surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s per jesd 22-b106 (for to-220ab package) ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency rectifier of switching power supplies, freewheeling di odes, dc/dc converters or polarity protection specif ically for dcm application. mechanical data case: to-220ab, to-263ab molding compound meets ul 94v-0 flammab ility rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs max. primary characteristics i f(av) 2 x 10 a v rrm 100 v to 200 v i fsm 100 a t rr 26 ns v f at i f = 10 a 0.834 v t j max. 150 c package to-220ab, to-263ab diode variation dual common cathode to-220ab 1 2 3 1 2 k to-263ab case pin 2 pin 1 pin 3 u20xct ub20xct k pin 1 pin 2 heatsink maximum ratings (t c = 25 c unless otherwise noted) parameter symbol u(b)20bct u(b)20cct u(b)20dct unit max. repetitive peak reverse voltage v rrm 100 150 200 v max. average forward rectified current (fig. 1) total device i f(av) 20 a per diode 10 peak forward surge current 10 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 100 a electrostatic discharg e capacitor voltage, ? human body model: c = 150 pf, r = 1.5 k ?? (contact mode) v c 8kv operating junction and storage temperature range t j , t stg -55 to +150 c
u20xct-e3, ub20xct-e3 www.vishay.com vishay general semiconductor revision: 30-oct-13 2 document number: 89017 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - max. forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit instantaneous forward voltage per diode (1) i f = 5.0 a t j = 25 c v f 0.854 - v i f = 10 a 0.931 1.00 i f = 5.0 a t j = 100 c 0.760 - i f = 10 a 0.834 0.91 reverse current per diode (2) rated v r t j = 25 c i r 1.2 15 a t j = 100 c 120 500 reverse recovery time per diode i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 26 35 ns reverse recovery time per diode i f = 10 a, didt = 20 a/s, ? v r = 200 v, i rr = 0.1 i rm t rr 73 80 ns stored charge per diode q rr 30 - nc forward recovery time per diode i f = 10 a, di/dt = 80 a/s, ? v f = 1.1 x v f max. t fr 160 - ns peak forward voltage per diode v fp 2.6 - v thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol u20xct ub20xct unit typical thermal resistance per diode r ? jc 3.0 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab u20dct-e3/4w 1.87 4w 50/tube tube to-263ab ub20dct-e3/4w 1.37 4w 50/tube tube to-263ab ub20dct-e3/8w 1.37 8w 800/reel tape and reel 20 24 16 12 8 4 0 0 25 50 75 100 125 150 175 average forward re ctified current (a) case temperature (c) resistive or inductive load u20xct ub20xct 12 10 8 6 4 2 0 0 2 4 6 8 10 12 average power loss (w) average forward current (a) d = 0.1 d = 0.3 d = 0.5 d = 0.8 d = 1.0 d = 0.2 d = t p /t t p t
u20xct-e3, ub20xct-e3 www.vishay.com vishay general semiconductor revision: 30-oct-13 3 document number: 89017 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical juncti on capacitance per diode 100 10 1 0.1 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 instantaneous forward voltage (v) instantaneous forward current (a) t j = 100 c t j = 125 c t j = 50 c t j = 75 c 1000 100 10 10 20 30 40 50 60 70 80 90 100 1 percent of rated peak reverse voltage (%) instantaneous reverse current (a) t j = 125 c t j = 100 c t j = 50 c t j = 75 c 100 10 0.1 1 10 100 reverse voltage (v) junction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 100 0.1 1 0.1 0.01 0.001 1 10 100 t - pulse duration (s) transient thermal imped ance ( c/w)
u20xct-e3, ub20xct-e3 www.vishay.com vishay general semiconductor revision: 30-oct-13 4 document number: 89017 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n . 0.15 (3.81) mi n . 0.33 (8.38) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) mi n .
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